GT50JR22(STA1,E,S)
GT50JR22(STA1,E,S)
- Available: 75
- Manufacturer: Toshiba Semiconductor and Storage
- Part Number: GT50JR22(STA1,E,S)
- Detailed Description:IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
- Category:Discrete Semiconductor Products | Transistors - IGBTs - Single IGBTs
- RoHS Status： ROHS Compliant
- Datasheet: Datasheet
Reference Price (USD)
1+
5.9160
10+
5.5610
100+
5.2652
1000+
4.9694
10000+
4.6736
Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Series | - |
| Package | Tube |
| Standard Package | 25 |
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
| Power - Max | 230 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| RoHS Status | ROHS3 Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |