BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

  • Available: 0
  • Manufacturer: Infineon Technologies
  • Part Number: BSM150GB120DN2HOSA1
  • Detailed Description:IGBT Module Half Bridge 1200 V 210 A 1250 W Chassis Mount Module
  • Category:Discrete Semiconductor Products | Transistors - IGBTs - IGBT Modules
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
344.1550
10+
323.5057
100+
306.2980
1000+
289.0902
10000+
271.8825

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Infineon Technologies
Series -
Package Tray
Standard Package 10
Product Status Not For New Designs
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 210 A
Power - Max 1250 W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 150A
Current - Collector Cutoff (Max) 2.8 mA
Input Capacitance (Cies) @ Vce 11 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number BSM150
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

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