IRF200B211

IRF200B211

IRF200B211

  • Available: 250
  • Manufacturer: Infineon Technologies
  • Part Number: IRF200B211
  • Detailed Description:N-Channel 200 V 12A (Tc) 80W (Tc) Through Hole TO-220AB
  • Category:Discrete Semiconductor Products | Transistors - FETs, MOSFETs - Single
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
1.5000
10+
1.4100
100+
1.3350
1000+
1.2600
10000+
1.1850

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
Standard Package 50
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 7.2A | 10V
Vgs(th) (Max) @ Id 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF200
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

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