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Manufacturer | Infineon Technologies |
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Series | OptiMOS™ |
Package | Tube |
Standard Package | 50 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A | 10V |
Vgs(th) (Max) @ Id | 4V @ 53µA |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5260 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads | I²Pak | TO-262AA |
Base Product Number | IPI80N04 |
RoHS Status | ROHS3 Compliant |
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Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |