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Manufacturer | Infineon Technologies |
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Series | HEXFET® |
Package | Tube |
Standard Package | 50 |
Product Status | Last Time Buy |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
Rds On (Max) @ Id, Vgs | 480mOhm @ 4A | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
FET Feature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRF9520 |
RoHS Status | ROHS3 Compliant |
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Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |