SCT2H12NZGC11

SCT2H12NZGC11

SCT2H12NZGC11

  • Available: 30
  • Manufacturer: Rohm Semiconductor
  • Part Number: SCT2H12NZGC11
  • Detailed Description:N-Channel 1700 V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM
  • Category:Discrete Semiconductor Products | Transistors - FETs, MOSFETs - Single
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
9.0000
10+
8.4600
100+
8.0100
1000+
7.5600
10000+
7.1100

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Rohm Semiconductor
Series -
Package Tube
Standard Package 30
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A | 18V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 18 V
Vgs (Max) +22V | -6V
Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 800 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PFM
Package / Case TO-3PFM | SC-93-3
Base Product Number SCT2H12
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

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