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| Manufacturer | Rohm Semiconductor |
|---|---|
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Standard Package | 30 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 10A | 18V |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 18 V |
| Vgs (Max) | +22V | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
| Base Product Number | SCT2080 |
| RoHS Status | ROHS3 Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |