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Manufacturer | Rohm Semiconductor |
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Series | - |
Package | Tube |
Standard Package | 30 |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 20A | 18V |
Vgs(th) (Max) @ Id | 5.6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 18 V |
Vgs (Max) | +22V | -4V |
Input Capacitance (Ciss) (Max) @ Vds | 1337 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 262W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
Base Product Number | SCT3040 |
RoHS Status | ROHS3 Compliant |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |