IPD80R2K4P7ATMA1

IPD80R2K4P7ATMA1

IPD80R2K4P7ATMA1

  • Available: 0
  • Manufacturer: Infineon Technologies
  • Part Number: IPD80R2K4P7ATMA1
  • Detailed Description:N-Channel 800 V 2.5A (Tc) 22W (Tc) Surface Mount PG-TO252-3
  • Category:Discrete Semiconductor Products | Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
1.2600
10+
1.1844
100+
1.1214
1000+
1.0584
10000+
0.9954

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel (TR) | Cut Tape (CT)
Standard Package 2500
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V
FET Feature -
Power Dissipation (Max) 22W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD80R2
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

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