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Manufacturer | Vishay Siliconix |
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Series | - |
Package | Tube |
Standard Package | 1000 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 555mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Base Product Number | SIHP12 |
RoHS Status | ROHS3 Compliant |
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Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |