SIHP12N50C-E3

SIHP12N50C-E3

SIHP12N50C-E3

  • Available: 440
  • Manufacturer: Vishay Siliconix
  • Part Number: SIHP12N50C-E3
  • Detailed Description:N-Channel 500 V 12A (Tc) 208W (Tc) Through Hole
  • Category:Discrete Semiconductor Products | Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
3.2458
10+
3.0510
100+
2.8887
1000+
2.7264
10000+
2.5642

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Vishay Siliconix
Series -
Package Tube
Standard Package 1000
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 25 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Base Product Number SIHP12
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status
ECCN EAR99
HTSUS 8541.29.0095

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