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Manufacturer | Toshiba Semiconductor and Storage |
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Series | U-MOSVIII-H |
Package | Tape & Reel (TR) | Cut Tape (CT) |
Standard Package | 3000 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 33mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 27W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Base Product Number | TPN3300 |
RoHS Status | RoHS Compliant |
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Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |