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Manufacturer | Toshiba Semiconductor and Storage |
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Series | U-MOSVIII-H |
Package | Tape & Reel (TR) | Cut Tape (CT) |
Standard Package | 3000 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 100μA |
Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 22W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.1x3.1) |
Package / Case | 8-PowerVDFN |
Base Product Number | TPN8R903 |
RoHS Status | RoHS Compliant |
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Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |