PDTA124ES,126
PDTA124ES,126
- Available: 0
- Manufacturer: NXP USA Inc.
- Part Number: PDTA124ES,126
- Detailed Description:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
- Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Single, Pre-Biased
- RoHS Status： ROHS Compliant
- Datasheet: Datasheet
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| Manufacturer | NXP USA Inc. |
|---|---|
| Series | - |
| Package | - |
| Standard Package | 2000 |
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA | 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA | 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Power - Max | 500 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3 | TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | PDTA12 |
| RoHS Status | ROHS3 Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |