2SD1407A-Y(F)

2SD1407A-Y(F)

2SD1407A-Y(F)

  • Available: 0
  • Manufacturer: Toshiba Semiconductor and Storage
  • Part Number: 2SD1407A-Y(F)
  • Detailed Description:Bipolar (BJT) Transistor NPN 100 V 5 A 12MHz 30 W Through Hole TO-220NIS
  • Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Single Bipolar Transistors
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
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Manufacturer Toshiba Semiconductor and Storage
Series -
Package Tube
Standard Package 50
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2V @ 400mA, 4A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 5V
Power - Max 30 W
Frequency - Transition 12MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Base Product Number 2SD1407
RoHS Status
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status
ECCN EAR99
HTSUS 8541.29.0095

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