2SD1407A-Y(F)
2SD1407A-Y(F)
- Available: 0
- Manufacturer: Toshiba Semiconductor and Storage
- Part Number: 2SD1407A-Y(F)
- Detailed Description:Bipolar (BJT) Transistor NPN 100 V 5 A 12MHz 30 W Through Hole TO-220NIS
- Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Single Bipolar Transistors
- RoHS Status： ROHS Compliant
- Datasheet: Datasheet
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| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Series | - |
| Package | Tube |
| Standard Package | 50 |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 5V |
| Power - Max | 30 W |
| Frequency - Transition | 12MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220NIS |
| Base Product Number | 2SD1407 |
| RoHS Status | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |