2SC3324GRTE85LF

2SC3324GRTE85LF

2SC3324GRTE85LF

  • Available: 0
  • Manufacturer: Toshiba Semiconductor and Storage
  • Part Number: 2SC3324GRTE85LF
  • Detailed Description:Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236
  • Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Single Bipolar Transistors
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
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Manufacturer Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR) | Cut Tape (CT)
Standard Package 3000
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 100MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236
Base Product Number 2SC3324
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status
ECCN EAR99
HTSUS 8541.21.0075

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