ULN2803APG,CN
ULN2803APG,CN
- Available: 0
- Manufacturer: Toshiba Semiconductor and Storage
- Part Number: ULN2803APG,CN
- Detailed Description:Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
- Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
- RoHS Status： ROHS Compliant
- Datasheet: Datasheet
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| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Series | - |
| Package | Tube |
| Standard Package | 800 |
| Product Status | Obsolete |
| Transistor Type | 8 NPN Darlington |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Power - Max | 1.47W |
| Frequency - Transition | - |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 18-DIP (0.300", 7.62mm) |
| Supplier Device Package | 18-DIP |
| Base Product Number | ULN2803 |
| RoHS Status | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |