MT3S111TU,LF

MT3S111TU,LF

MT3S111TU,LF

  • Available: 9000
  • Manufacturer: Toshiba Semiconductor and Storage
  • Part Number: MT3S111TU,LF
  • Detailed Description:RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
  • Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Bipolar RF Transistors
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
0.6960
10+
0.6542
100+
0.6194
1000+
0.5846
10000+
0.5498

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR) | Cut Tape (CT)
Standard Package 3000
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain 12.5dB
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Supplier Device Package UFM
Base Product Number MT3S111
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status
ECCN EAR99
HTSUS 8541.21.0075

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