RN1963(TE85L,F)

RN1963(TE85L,F)

RN1963(TE85L,F)

  • Available: 1500
  • Manufacturer: Toshiba Semiconductor and Storage
  • Part Number: RN1963(TE85L,F)
  • Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  • Category:Discrete Semiconductor Products | Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • RoHS Status: ROHS Compliant
  • Datasheet: Datasheet
Reference Price (USD)
1+
0.5760
10+
0.5414
100+
0.5126
1000+
0.4838
10000+
0.4550

Considering price fluctuations, this price is only for reference. Please send RFQ to info@aceera.net to get the best price, thank you.

Manufacturer Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR) | Cut Tape (CT)
Standard Package 3000
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number RN1963
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status
ECCN EAR99
HTSUS 8541.21.0095

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